1.5smc series vishay general semiconductor document number: 88303 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 1500 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional devices use ca suffix (e.g. 1.5smc220ca). electrical characteristics apply in both directions. primary characteristics v br uni-directional 6.8 v to 540 v v br bi-directional 6.8 v to 220 v p ppm 1500 w p d 6.5 w i fsm (uni-directional only) 200 a t j max. 150 c do-214ab (smc) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 1500 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on in finite heatsink t a = 50 c p d 6.5 w peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) i fsm 200 a operating junction and storage temperature range t j , t stg - 65 to + 150 c
1.5smc series vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88303 revision: 21-oct-08 2 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee ca62.35 (4) for bi-directional types with v r 10 v and less, the i d limit is doubled (5) v f = 3.5 v at i f = 100 a (uni-directional only) electrical characteristics (t a = 25 c unless otherwise noted) general semiconductor part number device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (4) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temp. coefficient of v br (%/c) uni bi min. max. 1.5smc6.8a 6v8a 6v8c 6.45 7.14 10 5.80 1000 143 10.5 0.057 1.5smc7.5a 7v5a 7v5c 7.13 7.88 10 6.40 500 133 11.3 0.061 1.5smc8.2a 8v2a 8v2c 7.79 8.61 10 7.02 200 124 12.1 0.065 1.5smc9.1a 9v1a 9v1c 8.65 9.55 1.0 7.78 50 112 13.4 0.068 1.5smc10a 10a 10c 9.50 10.5 1.0 8.55 10 103 14.5 0.073 1.5smc11a 11a 11c 10.5 11.6 1.0 9.40 5.0 96.2 15.6 0.075 1.5smc12a 12a 12c 11.4 12.6 1.0 10.2 5.0 89.8 16.7 0.078 1.5smc13a 13a 13c 12.4 13.7 1.0 11.1 5.0 82.4 18.2 0.081 1.5smc15a 15a 15c 14.3 15.8 1.0 12.8 1.0 70.8 21.2 0.084 1.5smc16a 16a 16c 15.2 16.8 1.0 13.6 1.0 66.7 22.5 0.086 1.5smc18a 18a 18c 17.1 18.9 1.0 15.3 1.0 59.5 25.2 0.089 1.5smc20a 20a 20c 19.0 21.0 1.0 17.1 1.0 54.2 27.7 0.090 1.5smc22a 22a 22c 20.9 23.1 1.0 18.8 1.0 49.0 30.6 0.092 1.5smc24a 24a 24c 22.8 25.2 1.0 20.5 1.0 45.2 33.2 0.09 1.5smc27a 27a 27c 25.7 28.4 1.0 23.1 1.0 40.0 37.5 0.096 1.5smc30a 30a 30c 28.5 31.5 1.0 25.6 1.0 36.2 41.4 0.097 1.5smc33a 33a 33c 31.4 34.7 1.0 28.2 1.0 32.8 45.7 0.098 1.5smc36a 36a 36c 34.2 37.8 1.0 30.8 1.0 30.1 49.9 0.099 1.5smc39a 39a 39c 37.1 41.0 1.0 33.3 1.0 27.8 53.9 0.100 1.5smc43a 43a 43c 40.9 45.2 1.0 36.8 1.0 25.3 59.3 0.101 1.5smc47a 47a 47c 44.7 49.4 1.0 40.2 1.0 23.1 64.8 0.101 1.5smc51a 51a 51c 48.5 53.6 1.0 43.6 1.0 21.4 70.1 0.102 1.5smc56a 56a 56c 53.2 58.8 1.0 47.8 1.0 19.5 77.0 0.103 1.5smc62a 62a 62c 58.9 65.1 1.0 53.0 1.0 17.6 85.0 0.104 1.5smc68a 68a 68c 64.6 71.4 1.0 58.1 1.0 16.3 92.0 0.104 1.5smc75a 75a 75c 71.3 78.8 1.0 64.1 1.0 14.6 104 0.105 1.5smc82a 82a 82c 77.9 86.1 1.0 70.1 1.0 13.3 113 0.105 1.5smc91a 91a 91c 86.5 95.5 1.0 77.8 1.0 12.0 125 0.106 1.5smc100a 100a 100c 95.0 105 1.0 85.5 1.0 10.9 137 0.106 1.5smc110a 110a 110c 105 116 1.0 94.0 1.0 9.9 152 0.107 1.5smc120a 120a 120c 114 126 1.0 102 1.0 9.1 165 0.107 1.5smc130a 130a 130c 124 137 1.0 111 1.0 8.4 179 0.107 1.5smc150a 150a 150c 143 158 1.0 128 1.0 7.2 207 0.106 1.5smc160a 160a 160c 152 168 1.0 136 1.0 6.8 219 0.108 1.5smc170a 170a 170c 162 179 1.0 145 1.0 6.4 234 0.108 1.5smc180a 180a 180c 171 189 1.0 154 1.0 6.1 246 0.108 1.5smc200a 200a 200c 190 210 1.0 171 1.0 5.5 274 0.108 1.5smc220a 220a 220c 209 231 1.0 185 1.0 4.6 328 0.108 1.5smc250a 250a - 237 263 1.0 214 1.0 4.4 344 0.110 1.5smc300a 300a - 285 315 1.0 256 1.0 3.6 414 0.110 1.5smc350a 350a - 333 368 1.0 300 1.0 3.1 482 0.110 1.5smc400a 400a - 380 420 1.0 342 1.0 2.7 548 0.110 1.5smc440a 440a - 418 462 1.0 376 1.0 2.5 602 0.110 1.5smc480a 480a - 456 504 1.0 408 1.0 2.28 658 0.110 1.5smc510a 510a - 485 535 1.0 434 1.0 2.15 698 0.110 1.5smc540a 540a - 513 567 1.0 459 1.0 2.03 740 0.110
1.5smc series vishay general semiconductor document number: 88303 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 note: (1) mounted on minimum recommended pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit thermal resistance, junction to ambient air (1) r ja 75 c/w thermal resistance, junction to leads r jl 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 1.5smc6.8a-e3/57t 0.211 57t 850 7" diameter plastic tape and reel 1.5smc6.8a-e3/9at 0.211 9at 3500 13" diameter plastic tape and reel 1.5smc6.8ahe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel 1.5smc6.8ahe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1 10 100 0.31 x 0.31" ( 8 .0 x 8 .0 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0 25 50 75 100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance uni-directional 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 20 000 10 1 100 400 uni-directional bi-directional t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v )
1.5smc series vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88303 revision: 21-oct-08 4 package outline dimensions in inches (millimeters) figure 5. typical transi ent thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 100 10 1 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive forward surge current uni-directional use only 1 10 100 10 100 200 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.320 ref. mountin g pad layout 0 (0) 0.1 8 5 (4.69) max. 0.126 (3.20) mi n . 0.060 (1.52) mi n .
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